IPA90R800C3

Name: IPA90R800C3
Brand: Infineon Technologies
SKU: B0C1F8-DS
Availability: InStock

MOSFET N-CH 900V 6.9A TO220

1 : $0.0000

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Dasenic Part Number

B0C1F8-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IPA90R800C3

Customer Reference

Datasheet

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Sample

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12000 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220-3 Full Pack Bulk

Quantity

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Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO220 Full Pack
Power Dissipation ( Max)	33W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	900 V
Current - Continuous Drain ( Id) @ 25° C	6.9A (Tc)
Rds On ( Max) @ Id, Vgs	800mOhm @ 4.1A, 10V
Vgs(th) ( Max) @ Id	3.5V @ 460µA
Gate Charge ( Qg) ( Max) @ Vgs	42 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1100 pF @ 100 V
Vgs ( Max)	±20V
Series	CoolMOS™

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IPA90R800C3 is a discrete semiconductor component that is a N-channel power MOSFET. It is designed with Infineon's CoolMOS???technology, offering excellent efficiency and performance in power supply applications. The key features of the IPA90R800C3 include a high breakdown voltage of 800V, a low on-state resistance of 0.9 ohms, and a high current rating of 27A. It also has a low gate charge and input capacitance, making it suitable for high-frequency switching applications. The IPA90R800C3 is housed in a TO-220 package, making it easy to install and integrate into various electronic circuits. Its robust design and high reliability make it ideal for use in industrial, automotive, and consumer electronic applications