The FQD5P10TM is a discrete semiconductor component that is commonly used in power management applications. This component is a P-channel MOSFET transistor with a drain-source voltage of 100V and a continuous drain current of 5A. It features a low on-resistance of 0.22 ohms, making it highly efficient for power switching applications. The FQD5P10TM also has a gate threshold voltage of -2V, allowing for easy control of the transistor. Additionally, it has a maximum junction temperature of 175 degrees Celsius, ensuring reliable operation even in high-temperature environments. Overall, the FQD5P10TM is a versatile and reliable component that is ideal for a wide range of power management applications