The FQD13N10TM is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It is a discrete semiconductor component that offers a maximum drain-source voltage of 100V and a continuous drain current of 13A.
Key features of the FQD13N10TM include a low on-resistance of 0.13 ohms, which allows for efficient power management and reduced power loss. It also has a fast switching speed, making it ideal for applications that require high-frequency switching such as DC-DC converters, motor controls, and power supplies.
The FQD13N10TM is housed in a TO-252 package, which allows for easy mounting and heat dissipation. It is designed for use in a wide range of industrial and automotive applications where high efficiency and reliability are essential