The FDY100PZ is a discrete semiconductor component that serves as a P-channel MOSFET transistor. It is specifically designed for high-speed switching applications in power management circuits. This component has a maximum drain-source voltage of 60V and a continuous drain current of 9.4A, making it suitable for a wide range of power supply and battery management systems.
Key features of the FDY100PZ include a low on-resistance of 60 mΩ, ensuring minimal power dissipation and high efficiency. It also has a low gate charge of 26 nC, enabling fast switching speeds and reducing switching losses. The compact TO-252 package provides easy integration into existing circuit designs and ensures reliable performance in various operating conditions. Overall, the FDY100PZ is a reliable and high-performance semiconductor component for power management applications that require precision and efficiency
