The FDN357N is a small signal N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in discrete semiconductor circuits. With a maximum drain-source voltage of 20V, this transistor is suitable for low power applications.
Key features of the FDN357N include a low on-resistance of 210mΩ, a continuous drain current of 1.7A, and a fast switching speed, making it ideal for use in switching and amplification circuits. The transistor is housed in a compact SOT-23 package, allowing for easy integration into electronic systems with limited space.
Additionally, the FDN357N has a low threshold voltage of 1V, making it compatible with low voltage applications. The transistor has a high pulsing current capability of up to 10A, allowing for reliable performance in high stress environments.
Overall, the FDN357N is a versatile and reliable discrete semiconductor component that is well-suited for a wide range of electronic applications
