FDB2532

MOSFET N-CH 150V 8A/79A D2PAK

1 : $4.0500

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Dasenic Part Number

BAC2EE-DS

Manufacturer

Onsemi

Manufacturer Part #

FDB2532

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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4800 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Quantity

Unit Price

$ 4.05

Total

$ 4.05

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Supplier Device Package	D2PAK (TO-263)
Power Dissipation ( Max)	310W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	150 V
Current - Continuous Drain ( Id) @ 25° C	8A (Ta), 79A (Tc)
Rds On ( Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	107 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	5870 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	6V, 10V
Vgs ( Max)	±20V

Kindly contact our sales Rep to obtain the data you desire for FDB2532.
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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The FDB2532 is a discrete semiconductor component that serves as a PowerTrench MOSFET transistor. This device is designed for high-speed switching applications in power management, portable electronics, and automotive systems. The FDB2532 offers a low ON-resistance of 20mΩ, allowing for efficient power handling and minimal heat dissipation. It has a drain-source voltage rating of 25V and a continuous drain current of 75A. This MOSFET also features a compact and surface-mountable D2PAK package, making it suitable for space-constrained applications. With its high performance and reliability, the FDB2532 is ideal for use in various power control and amplification circuits