The SMBT3904DW1T1G is a small signal NPN bipolar junction transistor (BJT) designed for general purpose switching and amplification applications. This discrete semiconductor component can handle a maximum continuous collector current of 200mA, making it suitable for low to medium power circuit designs.
Key features of the SMBT3904DW1T1G include a low voltage drop across the collector-emitter junction, high current amplification capabilities, and fast switching speeds. It has a maximum power dissipation of 250mW and a voltage rating of 40V.
The SMBT3904DW1T1G is housed in a SOT-363 surface mount package, which is small and lightweight, making it ideal for compact device designs. Its low profile and compatibility with automated assembly processes make it a popular choice for manufacturers looking to maximize space and efficiency in their products. Overall, the SMBT3904DW1T1G offers reliable performance and versatility for a wide range of electronic applications
