The NTZD5110NT1G is a discrete semiconductor component that belongs to the family of N-channel MOSFET transistors. It is designed for high-speed switching applications in power management and voltage regulation circuits.
Key features of the NTZD5110NT1G include a low on-resistance of 55mOhms, a low gate charge of 10nC, and a maximum drain-source voltage of 100V. These specifications make it suitable for efficiently controlling power flow in various electronic devices.
The NTZD5110NT1G is housed in a compact DFN3332 package, which allows for easy integration into small circuit designs. It also has a temperature range of -55°C to 150°C, ensuring reliable performance even in harsh operating conditions.
Overall, the NTZD5110NT1G offers high-performance characteristics and compact size, making it a versatile and reliable choice for power management applications
