The NTJD5121NT1G is a N-Channel Power MOSFET designed for high-speed switching applications in a wide range of power management and control systems. This discrete semiconductor component features a low on-state resistance of 12 mOhm, allowing for efficient power conversion and minimal power loss.
With a maximum drain current of 19 A and a gate threshold voltage of 3 V, the NTJD5121NT1G is well-suited for use in applications requiring high current handling capabilities and precise control over switching operations. This MOSFET also has a low gate charge of 8 nC, ensuring fast and reliable switching performance.
The NTJD5121NT1G is housed in a compact and surface-mount compatible DPAK package, making it easy to integrate into a variety of circuit designs. Its robust construction and high-temperature capabilities ensure long-term reliability in demanding environments. Overall, this N-Channel Power MOSFET offers high performance, efficiency, and versatility for a wide range of power management applications
