The NST45010MW6T1G is a discrete semiconductor component that is part of the N-Channel Power MOSFET family. It is designed for high-speed switching applications and is capable of handling high power levels.
Key features of the NST45010MW6T1G include a low on-resistance of 45 mOhm, a drain-source voltage rating of 100V, and a continuous drain current of 26A. This makes it suitable for a wide range of applications, including power supplies, motor control, and DC-DC converters.
The NST45010MW6T1G is housed in a compact and efficient PowerPAK package, which helps to minimize the thermal resistance and improve overall performance. It also has a high avalanche energy rating, making it durable and reliable in harsh operating conditions.
Overall, the NST45010MW6T1G is a high-performance and versatile discrete semiconductor component that offers excellent efficiency and reliability in a range of power applications
