The MUN5335DW1T2G is a discrete semiconductor component manufactured by ON Semiconductor. It is a NPN bipolar junction transistor (BJT) with a maximum collector current of 500 mA and a maximum voltage of 50 V. This transistor is designed for general purpose amplification and switching applications.
Key features of the MUN5335DW1T2G include a low saturation voltage of 0.35 V, which helps to reduce power consumption and heat dissipation in the circuit. It also has a high current gain (hfe) of 180-800, making it suitable for applications requiring high amplification.
The MUN5335DW1T2G is housed in a small SOT-363 surface mount package, making it ideal for use in compact electronic devices where space is limited. It is also RoHS compliant, ensuring it meets environmental regulations for restricting the use of hazardous substances in electronic components.
Overall, the MUN5335DW1T2G is a reliable and versatile discrete semiconductor component that is well-suited for a wide range of amplification and switching applications in various electronic devices and circuits
