The MMDL6050T1G is a small-signal, low-power NPN bipolar transistor from ON Semiconductor. This discrete semiconductor component is housed in a SOT-23 package and is suitable for use in various low-current and low-voltage applications including amplification, switching, and voltage regulation.
Key features of the MMDL6050T1G include a maximum collector-base voltage of 12V, a maximum collector-emitter voltage of 8V, and a maximum emitter-base voltage of 6V. Its maximum continuous collector current is 100mA, with a power dissipation of 225mW.
This transistor has a high current gain (hFE) of up to 400, making it ideal for use in low-power amplification circuits. It also has a low base-emitter saturation voltage of 0.6V at 10mA, allowing for efficient switching performance. The MMDL6050T1G is RoHS compliant and operates over a temperature range of -55°C to 150°C.
Overall, the MMDL6050T1G is a versatile and reliable discrete semiconductor component suitable for a wide range of low-power electronics applications
