The MMBT6427LT1G is a discrete semiconductor component, specifically a PNP Bipolar Junction Transistor (BJT) designed for general purpose amplification and switching applications. It is housed in a SOT-23 package and features a maximum power dissipation of 225mW and a collector current of 500mA.
Key features of the MMBT6427LT1G include a low saturation voltage of 0.5V at 10mA collector current, a high current gain (hfe) of 100 to 600, and a cutoff frequency of 250MHz. It has a high transition frequency (ft) of 250MHz and a low feedback capacitance of 5pF.
The MMBT6427LT1G operates over a wide temperature range of -55°C to 150°C, making it suitable for use in various industrial and consumer electronic applications. Its small form factor and high performance characteristics make it ideal for use in portable devices, telecommunications equipment, and power management circuits
