The MMBT2907ALT1G is a PNP bipolar junction transistor (BJT) discrete semiconductor component commonly used in various electronic circuits. It is designed for general-purpose switching and amplification applications.
Key features of the MMBT2907ALT1G include a maximum collector current of 600mA, a maximum collector-emitter voltage of 60V, and a maximum power dissipation of 350mW. It has a low collector-emitter saturation voltage of 0.2V, which ensures efficient switching performance.
The MMBT2907ALT1G is housed in a small SOT-23 surface-mount package, making it suitable for compact electronic designs. It has a high current gain and low leakage current, providing reliable operation in different operating conditions.
Overall, the MMBT2907ALT1G offers a reliable and cost-effective solution for various low-power applications in industries such as telecommunications, automotive, and consumer electronics
