The MMBT2222AWT1G is a general-purpose NPN bipolar junction transistor (BJT) with a SOT-323 package. It is designed for low power amplification and switching applications. This transistor has a maximum power dissipation of 225mW and a continuous collector current of 600mA. The MMBT2222AWT1G has a maximum DC current gain of 300 and a collector-base voltage of 75V. It has a switching speed of 300MHz and a low on-state voltage of 1.3V. This transistor is RoHS compliant and is suitable for a wide range of electronic circuits including amplifiers, oscillators, and logic gates. Its compact size makes it ideal for space-constrained applications