The MMBT2222ALT1G is a general purpose NPN bipolar junction transistor (BJT) that is ideal for use in a wide range of applications. This transistor has a maximum power dissipation of 350mW and a maximum collector current of 600mA, making it suitable for many low to medium power circuits.
Some key features of the MMBT2222ALT1G include a high current gain (hfe) of 100 to 300 at a collector current of 150mA, a low saturation voltage of 0.3V at a collector current of 100mA, and a low cutoff frequency of 250MHz. The transistor is housed in a SOT-23 surface mount package, making it easy to integrate into compact circuit designs.
Overall, the MMBT2222ALT1G is a reliable and versatile discrete semiconductor component that is commonly used in amplification, switching, and signal processing circuits in various electronic devices and systems
