The MBT3946DW1T1G is a high voltage NPN transistor in a SOT-363 package, suitable for low voltage, low power applications. This discrete semiconductor component features a maximum collector-emitter voltage of 40V, a maximum collector current of 100mA, and a total power dissipation of 225mW. The transistor has a low saturation voltage and high current gain, making it ideal for use in switching and amplification circuits. With a compact surface-mount package and temperature range of -55°C to 150°C, the MBT3946DW1T1G is designed for easy integration and reliable performance in a variety of electronic designs