FQD4P25TM-WS

Name: R5F1016CASP#30
Brand: Renesas Electronics
SKU: CFC521-DS
Price: 1.44 USD
Availability: InStock

MOSFET P-CH 250V 3.1A DPAK

1 : $2.1200

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Dasenic Part Number

3C1732-DS

Manufacturer

Onsemi

Manufacturer Part #

FQD4P25TM-WS

Customer Reference

Datasheet

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Sample

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2508 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity

Unit Price

$ 2.12

Total

$ 2.12

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-252AA
Power Dissipation ( Max)	2.5W (Ta), 45W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	250 V
Current - Continuous Drain ( Id) @ 25° C	3.1A (Tc)
Rds On ( Max) @ Id, Vgs	2.1Ohm @ 1.55A, 10V
Vgs(th) ( Max) @ Id	5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	14 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	420 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±30V

Kindly contact our sales Rep to obtain the data you desire for FQD4P25TM-WS.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The FQD4P25TM-WS is a discrete semiconductor component designed for use in power management applications. This N-channel enhancement mode power MOSFET has a low on-resistance of 0.08 ohms, making it ideal for high-efficiency power switching circuits. Its high current handling capabilities (4A) and low gate charge make it suitable for use in a wide range of applications, including voltage regulators, motor control, and DC-DC converters. The FQD4P25TM-WS is housed in a small form factor TO-252 package, allowing for easy integration into compact electronic designs. Its high reliability and performance characteristics make it a go-to choice for engineers looking for a robust and efficient power semiconductor solution