The FQD10N20CTM is a discrete semiconductor component that offers high-performance characteristics for various applications. This N-channel MOSFET transistor is designed with a gate threshold voltage of 2.5V, a drain-source voltage of 200V, and a continuous drain current of 10A. The device features low on-state resistance, which allows for efficient power management and reduced power dissipation. It also has a fast switching speed and low gate charge, making it suitable for applications requiring high-speed operation. The FQD10N20CTM comes in a TO-252 package, providing a compact and reliable solution for power electronics design. Its robust construction and high thermal conductivity ensure excellent performance even in demanding environments. Overall, the FQD10N20CTM is a versatile and dependable semiconductor component for power switching and amplification applications
