The FQB22P10TM is a discrete semiconductor component that belongs to the Power MOSFET category. It is classified as a P-Channel enhancement-mode field-effect transistor (FET). This component is designed to handle high power applications with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 22A. The FQB22P10TM has a low on-resistance of 0.11 ohms and a gate-source threshold voltage of -2.5V. It is constructed with a TO-263-3 package, which allows for efficient heat dissipation. This MOSFET is suitable for use in a variety of applications such as power supplies, motor controls, and inverters. The FQB22P10TM is known for its reliability, high performance, and robustness in demanding operating conditions