The FDS6675BZ is a discrete semiconductor component known as a dual N-channel PowerTrench MOSFET. It features a low on-resistance of 8mΩ at a 10V gate voltage, making it ideal for applications requiring high efficiency and low power loss. The FDS6675BZ has a maximum drain-source voltage of 30V and a continuous drain current of 13A. This component is housed in a D2PAK package, making it suitable for high power applications where space is limited. The FDS6675BZ is designed for use in power management applications such as voltage regulators, motor control, and DC-DC converters. Its high power handling capabilities, low on-resistance, and small package size make it a versatile and reliable choice for a wide range of applications