The FDS6670A is a dual N-channel PowerTrench MOSFET designed for use in high-efficiency power management applications. This discrete semiconductor component offers a low on-resistance of 17mΩ and a maximum drain current of 13A, making it suitable for high-current switching circuits. The FDS6670A is housed in a compact SO-8 package, allowing for easy installation and integration into various electronic designs. Additionally, the component features a threshold voltage of 2V, ensuring reliable performance in a wide range of operating conditions. With its high power density and low on-resistance, the FDS6670A is an excellent choice for applications requiring efficient power management and high current capabilities