The FDS6612A is a power MOSFET transistor manufactured by Fairchild Semiconductor. It is a dual N-channel device with a maximum drain-source voltage of 20V, making it suitable for low voltage applications. The FDS6612A has a continuous drain current rating of 5.3A and a low on-resistance of 0.02 ohms, allowing for efficient power handling.
This MOSFET features a fast switching speed and low gate charge, enabling high efficiency in power conversion circuits. It is housed in a compact DFN package, which provides a small footprint for space-constrained applications. The FDS6612A is designed for use in applications such as DC-DC converters, power management systems, and motor control.
Key features of the FDS6612A include a low threshold voltage of 1V, a high current handling capability, and a low gate charge. These features make it an ideal choice for low voltage, high current applications where efficiency and space savings are critical. Overall, the FDS6612A is a reliable and versatile discrete semiconductor component for a variety of power electronics applications
