The FDN336P is a small signal N-channel MOSFET transistor designed for use in a variety of electronic applications. This component is used to switch and amplify electronic signals in circuits requiring low power consumption and high efficiency.
The key features of the FDN336P include a low ON-resistance of 0.04 ohms, making it suitable for low voltage and low current applications. It has a maximum drain current of 500mA and a maximum gate-source voltage of ±20V. This MOSFET operates at a maximum junction temperature of 150°C and has a thermal resistance of 350°C/W.
The FDN336P comes in a compact SOT23 package, making it ideal for space-constrained applications. It is also RoHS-compliant, ensuring it meets environmental standards for electronic components.
Overall, the FDN336P is a reliable and versatile discrete semiconductor component that is commonly used in various electronics and electrical devices for efficient signal switching and amplification
