The FDN335N is a N-channel enhancement mode field-effect transistor (FET) manufactured by Fairchild Semiconductor. It is designed for use in applications where high power density and efficiency are required. The key features of the FDN335N include a low on-resistance of 1.2 ohms, a maximum drain-source voltage of 20 volts, and a maximum continuous drain current of 2.6 amperes. This FET also offers a fast switching speed and low gate threshold voltage, making it ideal for use in power management, battery charging, and motor driving applications. Additionally, the FDN335N is housed in a compact SOT-23 package, allowing for space-efficient board layout and installation. Overall, the FDN335N is a reliable and efficient semiconductor component for a variety of electronic applications
