FDMS86163P

Name: 74AUP2G86RA3-7
Brand: Diodes Incorporated
SKU: A3DCB5-DS
Price: 0.396 USD
Availability: InStock

MOSFET P-CH 100V 7.9A/50A 8PQFN

1 : $2.2761

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Dasenic Part Number

CFDC0B-DS

Manufacturer

Texas Instruments

Manufacturer Part #

FDMS86163P

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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9000 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-PowerTDFN

Quantity

Unit Price

$ 2.2761

Total

$ 2.28

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Texas Instruments
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-PQFN (5x6)
Power Dissipation ( Max)	2.5W (Ta), 104W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	7.9A (Ta), 50A (Tc)
Rds On ( Max) @ Id, Vgs	22mOhm @ 7.9A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	59 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	4085 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On)	6V, 10V
Vgs ( Max)	±25V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The FDMS86163P is a discrete semiconductor component that is a PowerTrench® MOSFET designed for high efficiency and power density in power supply applications. It features a fast switching speed, low on-resistance, and high current capability. This MOSFET has a maximum drain-source voltage of 30V and a continuous drain current of 50A, making it suitable for a wide range of power management applications. The FDMS86163P also has a small form factor and a low thermal resistance, allowing for efficient heat dissipation and increased system reliability. Overall, this discrete semiconductor component is ideal for use in power supply circuits where high efficiency and power density are critical