FDMS3600S

Name: FDMS3600S
Brand: Onsemi
SKU: 29CABE-DS
Price: 0.639 USD
Availability: InStock

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Dasenic Part Number

29CABE-DS

Manufacturer

Onsemi

Manufacturer Part #

FDMS3600S

Customer Reference

Datasheet

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Sample

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39039 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-PowerTDFN Bulk

Quantity

Unit Price

$ 0.639

Total

$ 0.64

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	FETs, MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2.2W (Ta), 2.5W (Ta)
Supplier Device Package	8-PQFN (5x6)
Configuration	2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage ( Vdss)	25V
Current - Continuous Drain ( Id) @ 25° C	15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc)
Rds On ( Max) @ Id, Vgs	5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V
Vgs(th) ( Max) @ Id	2.7V @ 250µA, 3V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs	27nC @ 10V, 82nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds	1680pF @13V, 5375pF @ 13V
Series	PowerTrench®
Base Product Number	FDMS3600
Packaging	Bulk

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Environmental & Export Classifications

US ECCN	EAR99
HTS US	8542.39.0001
EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The FDMS3600S is a high-performance N-channel PowerTrench® MOSFET designed for use in a wide range of automotive and industrial applications. It offers low on-state resistance, high current handling capabilities, and excellent thermal performance. With a voltage rating of 40V and a continuous drain current of up to 30A, this MOSFET is suitable for power management in various systems. Its compact and lightweight design allows for easy installation in tight spaces. The FDMS3600S also features a low gate charge and fast switching speeds, making it ideal for high efficiency power conversion circuits. Overall, this discrete semiconductor component provides reliable and efficient performance for demanding applications