FDMC7582

Name: FDMC7582
Brand: Onsemi
SKU: 30DF6D-DS
Price: 0.441 USD
Availability: InStock

MOSFET N-CH 25V 16.7A/49A PWR33

1 : $0.4410

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Dasenic Part Number

30DF6D-DS

Manufacturer

Onsemi

Manufacturer Part #

FDMC7582

Customer Reference

Datasheet

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Sample

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42782 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-PowerTDFN Bulk

Quantity

Unit Price

$ 0.441

Total

$ 0.44

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Supplier Device Package	Power33
Power Dissipation ( Max)	2.3W (Ta), 52W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	25 V
Current - Continuous Drain ( Id) @ 25° C	16.7A (Ta), 49A (Tc)
Rds On ( Max) @ Id, Vgs	5mOhm @ 16.7A, 10V
Vgs(th) ( Max) @ Id	2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	28 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1795 pF @ 13 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	PowerTrench®
Packaging	Bulk

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Environmental & Export Classifications

US ECCN	EAR99
HTS US	8542.39.0001
EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The FDMC7582 is a high performance N-channel PowerTrench MOSFET specifically designed for use in discrete semiconductor applications. This component features a low on-state resistance, making it ideal for high efficiency switching applications. The FDMC7582 also boasts a high drain current rating of up to 5A, making it suitable for a wide range of power management applications. Additionally, this MOSFET has a compact and space-saving Power56 package design, allowing for easy integration into a variety of circuit configurations. Overall, the FDMC7582 offers excellent performance and reliability for demanding discrete semiconductor applications