The FDMC6675BZ is a discrete semiconductor component designed for high-efficiency power management applications. It is a high-performance N-channel MOSFET with a low on-resistance of only 4.3mOhms, making it ideal for use in power switching circuits.
Key features of the FDMC6675BZ include a high current rating of up to 250A, a low gate charge of 125nC, and a low threshold voltage of 1.6V. This MOSFET also features a high power dissipation capability, making it suitable for applications that require high power handling capabilities.
The FDMC6675BZ comes in a TO-220 package, making it easy to mount and integrate into existing systems. It is designed to operate in a wide temperature range, making it suitable for use in various environments.
Overall, the FDMC6675BZ is a high-performance discrete semiconductor component that offers high efficiency, low on-resistance, and high power handling capabilities, making it an ideal choice for power management applications