The FDG6304P is a N-channel logic level enhancement mode field effect transistor (FET) designed for low voltage applications. It features a small package size, making it ideal for use in portable electronic devices where space is limited. The FDG6304P has a low on-resistance of 0.04 ohms, allowing for efficient power management with minimal loss. It also has a low gate threshold voltage of 1.3V, making it compatible with low voltage drive circuits. This FET has a maximum drain-source voltage rating of 20V and a continuous drain current rating of 2.2A, suitable for a variety of low power switching applications. The FDG6304P is RoHS-compliant and is lead (Pb)-free, making it environmentally friendly. It is highly reliable and cost-effective, making it a popular choice for small-scale electronic projects
