The FDC3612 is a high voltage N-channel MOSFET designed for use in discrete semiconductor applications. This component features a maximum drain-source voltage of 150V, making it suitable for a wide range of power management applications. The FDC3612 has a low on-resistance of 0.26 ohms, which helps to minimize power loss and increase efficiency. With a continuous drain current rating of 12A, this MOSFET is capable of handling high power levels. Additionally, the FDC3612 has a fast switching speed and low input capacitance, making it ideal for high frequency applications. Overall, the FDC3612 is a reliable and high-performance discrete semiconductor component that is well-suited for power management tasks