The FCD360N65S3R0 is a discrete semiconductor component, specifically a power MOSFET designed for high power applications. This component features a drain-source voltage of 650V and a continuous drain current rating of 360A, making it suitable for high power switching applications.
The FCD360N65S3R0 is a three-terminal device with a gate threshold voltage of 4V and a low on-state resistance of 3.0 mΩ. This allows for efficient power management and reduced power losses in high current applications.
Additionally, the FCD360N65S3R0 is designed for reliability and durability, with a rugged construction that can withstand high temperatures and harsh operating conditions. This makes it ideal for use in industrial and automotive applications where high power handling and reliability are essential.
Overall, the FCD360N65S3R0 is a high-performance power MOSFET with excellent power handling capabilities, low on-state resistance, and high reliability, making it a versatile choice for a wide range of high power applications
