The BC846BDW1T1G is a general-purpose NPN bipolar transistor with low voltage and high current capability. It is a surface-mount component with a SOT-363 package, making it suitable for compact electronic devices.
Key features of the BC846BDW1T1G include a maximum collector current of 100mA, a maximum power dissipation of 250mW, and a maximum voltage of 65V. The transistor has a low saturation voltage of 0.2V at a collector current of 10mA, making it efficient for switching applications.
The BC846BDW1T1G is also characterized by its high hFE (DC current gain) at 50 to 400, providing good amplification capabilities. It has a low noise figure and high cutoff frequency, making it suitable for audio amplification and high-frequency applications.
In addition, this transistor has a low on-resistance and fast switching times, making it ideal for use in various electronic circuits such as amplifiers, switches, and oscillator circuits. Its small footprint and lightweight design make it easy to integrate into compact electronic devices.
Overall, the BC846BDW1T1G is a versatile discrete semiconductor component that offers high performance and reliability for a wide range of electronic applications
