The BC807-25LT1G is a silicon PNP bipolar junction transistor (BJT) designed for general purpose amplifier applications. It features a maximum collector-base voltage (VCBO) of -45V and a maximum collector-emitter voltage (VCEO) of -45V. This transistor has a maximum collector current (IC) of -500mA and a power dissipation (PD) of 330mW. The BC807-25LT1G has a DC current gain (hfe) ranging from 35 to 220 at a collector current of -100mA. This transistor is housed in a SOT-23 surface mount package, making it suitable for compact electronic devices. It is RoHS compliant and is designed for high-speed switching applications. Overall, the BC807-25LT1G is a reliable and versatile discrete semiconductor component for various circuit design needs