NTE5556-I

Name: NTE5556-I
Brand: NTE Electronics
SKU: A305A4-DS
Price: 2.295 USD
Availability: InStock

SCR 600V 25A ITO220AB

1 : $2.2950

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Dasenic Part Number

A305A4-DS

Manufacturer

NTE Electronics

Manufacturer Part #

NTE5556-I

Customer Reference

Datasheet

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Sample

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1826 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220-3 Isolated Tab

Quantity

Unit Price

$ 2.295

Total

$ 2.29

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	NTE Electronics
Discrete Semiconductor Devices	Thyristors (SCRs)
Product Status	Active
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Isolated Tab
Supplier Device Package	ITO-220AB
Current - Hold ( Ih) ( Max)	50 mA
Voltage - Off State	600 V
Current - On State ( It ( A V)) ( Max)	16 A
Current - On State ( It ( R M S)) ( Max)	25 A
Voltage - Gate Trigger ( Vgt) ( Max)	1.3 V
Current - Gate Trigger ( Igt) ( Max)	40 mA
Current - Non Rep. Surge 50, 60 Hz ( Itsm)	320A, 350A
Voltage - On State ( Vtm) ( Max)	1.6 V
Current - Off State ( Max)	5 µA
S C R Type	Standard Recovery

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The NTE5556-I is a discrete semiconductor component that is commonly used in electronic circuits. It is a Darlington power transistor that is known for its high current gain and low saturation voltage. Key features of the NTE5556-I include a collector current of 8A, a collector-emitter voltage of 125V, and a DC current gain of 1000. It also has a power dissipation of 140W and a junction temperature of 150°C. The NTE5556-I is ideal for applications that require high power amplification, such as audio amplifiers, power supplies, and motor control circuits. It is housed in a TO-3 package for easy mounting and heat dissipation. Overall, the NTE5556-I is a reliable and efficient discrete semiconductor component that is well-suited for high-power applications