The PSMN4R0-30YLDX is a power MOSFET component that is part of the N-channel enhancement mode field-effect transistor (FET) family. This discrete semiconductor device features a drain-source voltage of 30V and a continuous drain current of 170A, making it suitable for high-power applications.
Key features of the PSMN4R0-30YLDX include a low on-resistance of 4.0mΩ, which ensures minimal power loss and high efficiency in operation. The MOSFET also has a gate-source voltage (threshold) of 2.35V, allowing for easy switching and control.
The PSMN4R0-30YLDX is housed in a TO-220AB package, which provides good thermal performance and easy mounting on a heatsink. This component is designed to be robust and reliable, with a maximum operating temperature of 175°C.
Overall, the PSMN4R0-30YLDX is a high-performance discrete semiconductor component that is well-suited for power management applications where efficiency, reliability, and high current handling capability are essential
