MCC95-12IO1B

Name: MCC95-12IO1B
Brand: IXYS Corporation
SKU: A8CB6B-DS
Price: 35.433 USD
Availability: InStock

THYRISTOR MODULE 1200V 2X116A

1 : $35.4330

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

A8CB6B-DS

Manufacturer

IXYS Corporation

Manufacturer Part #

MCC95-12IO1B

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

8004 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-240AA

Quantity

Unit Price

$ 35.433

Total

$ 35.43

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	IXYS Corporation
Discrete Semiconductor Devices	Thyristors
Product Status	Active
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	TO-240AA
Structure	Series Connection - All SCRs
Current - Hold ( Ih) ( Max)	200 mA
Voltage - Off State	1.2 kV
Number of S C Rs, Diodes	2 SCRs
Current - On State ( It ( A V)) ( Max)	116 A
Current - On State ( It ( R M S)) ( Max)	180 A
Voltage - Gate Trigger ( Vgt) ( Max)	2.5 V
Current - Gate Trigger ( Igt) ( Max)	150 mA
Current - Non Rep. Surge 50, 60 Hz ( Itsm)	2250A, 2400A

Kindly contact our sales Rep to obtain the data you desire for MCC95-12IO1B.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The MCC95-12IO1B is a discrete semiconductor component that is a high power density IGBT module. It features a current rating of 95A and a voltage rating of 1200V. The module is designed for use in industrial applications such as motor drives, renewable energy systems, and power supplies. It has a compact and lightweight design, making it ideal for space-constrained applications. The MCC95-12IO1B also features low switching losses and high efficiency, making it a reliable choice for high-power applications. Its insulated-gate bipolar transistor (IGBT) technology offers high switch-off speeds and low conduction losses, resulting in improved overall performance and reliability