IRFHM9331TRPBF

Name: IRFHM9331TRPBF
Brand: Infineon Technologies
SKU: 73E0E1-DS
Price: 0.4547 USD
Availability: InStock

MOSFET P-CH 30V 11A/24A PQFN

1 : $0.4547

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Dasenic Part Number

73E0E1-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IRFHM9331TRPBF

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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45039 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-PowerTDFN

Quantity

Unit Price

$ 0.4547

Total

$ 0.45

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PQFN (3x3)
Power Dissipation ( Max)	2.8W (Ta)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	11A (Ta), 24A (Tc)
Rds On ( Max) @ Id, Vgs	10mOhm @ 11A, 20V
Vgs(th) ( Max) @ Id	2.4V @ 25µA
Gate Charge ( Qg) ( Max) @ Vgs	48 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1543 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V, 20V
Vgs ( Max)	±25V

Kindly contact our sales Rep to obtain the data you desire for IRFHM9331TRPBF.
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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRFHM9331TRPBF is a rugged and highly reliable discrete semiconductor component that is ideal for a wide range of power management applications. This component is a MOSFET with a voltage rating of 30V, a continuous drain current of 100A, and a low on-resistance of 1.2mΩ. The IRFHM9331TRPBF features a high power density design, making it suitable for use in high efficiency power conversion systems. It also has a compact footprint, allowing for easy integration into various circuit designs. Additionally, the IRFHM9331TRPBF has a high switching frequency capability, making it well-suited for applications that require fast switching speeds. Overall, this discrete semiconductor component offers superior performance and reliability in demanding power management applications