IRF530NS

MOSFET N-CH 100V 17A D2PAK

1 : $0.0000

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Dasenic Part Number

79519D-DS

Manufacturer

International Rectifier(IR)

Manufacturer Part #

IRF530NS

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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21 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tube

Quantity

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Manufacturer	International Rectifier(IR)
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Obsolete
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Supplier Device Package	D2PAK
Power Dissipation ( Max)	3.8W (Ta), 70W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	17A (Tc)
Rds On ( Max) @ Id, Vgs	90mOhm @ 9A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	37 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	920 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Series	HEXFET®
Packaging	Tube

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Environmental & Export Classifications

EU RoHS Status	RoHS non-compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The IRF530NS is a popular N-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high power switching applications. The key features of the IRF530NS include a low on-state resistance of 0.16 ohms, a continuous drain current of 14A, and a maximum power dissipation of 75W. This MOSFET can handle a voltage range of up to 100V, making it suitable for a variety of high power applications. The IRF530NS is housed in a TO-263 package with a compact footprint, making it easy to integrate into electronic circuits. Overall, the IRF530NS is a reliable and efficient discrete semiconductor component for various power switching applications