The IRF3415PBF is a powerful N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-power applications. This discrete semiconductor component is known for its high voltage and current handling capability, making it ideal for power supply and motor control circuits.
Key features of the IRF3415PBF include a drain-source voltage (VDS) of 150V, a continuous drain current (ID) of 41A, and a low on-resistance (RDS(on)) of only 17mΩ. Additionally, this MOSFET has a fast switching speed and a low gate threshold voltage, allowing for efficient switching operations.
The IRF3415PBF is housed in a TO-220 package, making it easy to integrate into various electronic designs. It also has a wide operating temperature range of -55°C to 175°C, ensuring reliable performance in harsh environments. Overall, this discrete semiconductor component is a reliable and versatile option for high-power applications
