The IRF1010EPBF is a N-channel power MOSFET transistor designed for high efficiency power management applications. It has a drain-source voltage of 60V and a continuous drain current of 84A, making it suitable for a wide range of power electronics circuits.
Key features of the IRF1010EPBF include a low on-resistance of 12.5mΩ, which ensures minimal power loss and high efficiency operation. The MOSFET also has a fast switching speed and high input capacitance, allowing for efficient operation in switching applications.
The IRF1010EPBF is housed in a TO-220 package, making it easy to integrate into existing circuit designs. It is also RoHS compliant, ensuring it meets current environmental regulations. Overall, the IRF1010EPBF is a reliable and high-performance discrete semiconductor component for power management applications
