The IRF100B202 is a discrete semiconductor component, specifically a power MOSFET transistor designed for high power applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 170A, making it suitable for a wide range of power management and switching applications. The IRF100B202 also has a low on-resistance of 0.0023 ohms, allowing for efficient power conversion with minimal losses. Additionally, this MOSFET transistor has a fast switching speed and a rugged design, making it well-suited for demanding industrial and automotive applications. Overall, the IRF100B202 offers high performance and reliability, making it a popular choice for power electronics designers