IPP65R045C7XKSA1

Name: MB96F623RBPMC1-GSE1
Brand: Infineon Technologies
SKU: 999DB3-DS
Availability: InStock

MOSFET N-CH 650V 46A TO220-3

1 : $7.3048

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Dasenic Part Number

338529-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IPP65R045C7XKSA1

Customer Reference

Datasheet

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5760 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220-3 Tube

Quantity

Unit Price

$ 7.3048

Total

$ 7.3

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO220-3
Power Dissipation ( Max)	227W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	650 V
Current - Continuous Drain ( Id) @ 25° C	46A (Tc)
Rds On ( Max) @ Id, Vgs	45mOhm @ 24.9A, 10V
Vgs(th) ( Max) @ Id	4V @ 1.25mA
Gate Charge ( Qg) ( Max) @ Vgs	93 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	4340 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Series	CoolMOS™ C7
Base Product Number	IPP65R045

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IPP65R045C7XKSA1 is a high-performance power MOSFET transistor designed for use in a wide range of industrial and automotive applications. This N-channel MOSFET features a voltage rating of 650V, a continuous drain current of 51A, and a low on-resistance of 45mΩ. This discrete semiconductor component is housed in a TO-220 package, making it easy to integrate into a variety of circuit designs. The IPP65R045C7XKSA1 also features a gate charge of 68nC, ensuring fast and efficient switching performance. Overall, the key features of the IPP65R045C7XKSA1 include its high voltage rating, low on-resistance, high current capacity, and fast switching speeds, making it an ideal choice for power management applications requiring high efficiency and reliability