IPD068P03L3GATMA1

Name: IPD068P03L3GATMA1
Brand: Infineon Technologies
SKU: B165F2-DS
Price: 0.6312 USD
Availability: InStock

MOSFET P-CH 30V 70A TO252-3

1 : $0.6312

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Dasenic Part Number

B165F2-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IPD068P03L3GATMA1

Customer Reference

Datasheet

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6817 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity

Unit Price

$ 0.6312

Total

$ 0.63

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO252-3
Power Dissipation ( Max)	100W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	70A (Tc)
Rds On ( Max) @ Id, Vgs	6.8mOhm @ 70A, 10V
Vgs(th) ( Max) @ Id	2V @ 150µA
Gate Charge ( Qg) ( Max) @ Vgs	91 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	7720 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IPD068P03L3GATMA1 is a discrete semiconductor component designed for power management applications. It is a P-channel MOSFET transistor with a maximum drain-source voltage of -30V and a continuous drain current of -6.8A. This component features low on-resistance, fast switching speed, and high power efficiency, making it suitable for a wide range of applications, including battery management, DC-DC converters, and load switching. The IPD068P03L3GATMA1 is housed in a compact and lightweight package, making it easy to integrate into various electronic systems. Its high-performance characteristics make it ideal for applications requiring high power density and reliability