The IPB80N06S2L07ATMA3 is a discrete semiconductor component, specifically a power MOSFET, designed for high efficiency power management applications. It features a low on-state resistance of 80mOhms and a high current rating of up to 80A, making it suitable for high power designs. This MOSFET has a voltage rating of 60V and is designed for use in automotive applications, with an AEC-Q101 qualified version available. The IPB80N06S2L07ATMA3 also features a TO-263 package for easy mounting and heat dissipation. Overall, this discrete semiconductor component offers high performance and reliability for demanding power management applications