IPB042N10N3GATMA1

Name: IPB042N10N3GATMA1
Brand: Infineon Technologies
SKU: 472FAB-DS
Price: 1.5776 USD
Availability: InStock

MOSFET N-CH 100V 100A D2PAK

1 : $1.5776

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

472FAB-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IPB042N10N3GATMA1

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

44400 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 1.5776

Total

$ 1.58

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Power Dissipation ( Max)	214W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	100A (Tc)
Rds On ( Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Vgs(th) ( Max) @ Id	3.5V @ 150µA
Gate Charge ( Qg) ( Max) @ Vgs	117 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	8410 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On)	6V, 10V
Vgs ( Max)	±20V
Series	OptiMOS™
Base Product Number	IPB042
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

Kindly contact our sales Rep to obtain the data you desire for IPB042N10N3GATMA1.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IPB042N10N3GATMA1 is a high-performance N-channel MOSFET from Infineon Technologies. It is designed for use in a wide range of applications requiring high power switching capabilities. The MOSFET features a low on-state resistance of 4.2mOhm, allowing for efficient power management and reduced power dissipation. It also has a high drain current rating of 220A, making it suitable for high current applications. The IPB042N10N3GATMA1 is housed in a TO263-3 package, offering high thermal performance and reliability. Overall, this MOSFET is a reliable and versatile component for power electronics applications