IKW50N65H5FKSA1

TO-247-3 IGBTs

1 : $3.6689

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Dasenic Part Number

D09476-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IKW50N65H5FKSA1

Customer Reference

Datasheet

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7560 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-247-3

Quantity

Unit Price

$ 3.6689

Total

$ 3.67

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Insulated Gate Bipolar Transistors (IGBTs)
Product Status	Active
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Input Type	Standard
Power - Max	305 W
Supplier Device Package	PG-TO247-3
Reverse Recovery Time (trr)	57 ns
Current - Collector ( Ic) ( Max)	80 A
Voltage - Collector Emitter Breakdown ( Max)	650 V
Vce(on) ( Max) @ Vge, Ic	2.1V @ 15V, 50A
Current - Collector Pulsed ( Icm)	150 A
Switching Energy	520µJ (on), 180µJ (off)
Gate Charge	120 nC
Td (on/off) @ 25° C	21ns/180ns
Test Condition	400V, 25A, 12Ohm, 15V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IKW50N65H5FKSA1 is a high voltage and high-speed switching N-channel power MOSFET produced by Infineon Technologies. It is designed for applications like lighting, induction heating, and uninterrupted power supplies (UPS). The device features a drain-source voltage of 650V, a continuous drain current of 50A, and a low gate charge of 45nC. The MOSFET also has a very low on-state resistance of 65mΩ, making it efficient for power management in various electronic devices. The IKW50N65H5FKSA1 is housed in a TO-247 package, which provides good thermal performance and reliability. Overall, this discrete semiconductor component offers high performance and efficiency for power switching applications