The BSC016N06NSATMA1 is a discrete semiconductor component, specifically a N-channel Power MOSFET manufactured by Infineon Technologies. This MOSFET is designed for high efficiency power management applications, with a maximum drain-source voltage of 60V and a continuous drain current of 38A. The BSC016N06NSATMA1 features a low on-state resistance of 0.016 ohms, allowing for minimal power dissipation and high power density. It is housed in a TO-263 package, providing excellent thermal performance and reliability. This MOSFET is ideal for use in a wide range of applications including power supplies, motor control, and DC-DC converters, where high efficiency and high current capabilities are required. Overall, the BSC016N06NSATMA1 offers high performance and robustness for demanding power management requirements
