BSC014N06NSATMA1

MOSFET N-CH 60V 30A/100A TDSON7

1 : $2.2590

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Dasenic Part Number

7EAC60-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

BSC014N06NSATMA1

Customer Reference

Datasheet

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25654 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-PowerTDFN

Quantity

Unit Price

$ 2.259

Total

$ 2.26

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TDSON-8-17
Power Dissipation ( Max)	2.5W (Ta), 156W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	60 V
Current - Continuous Drain ( Id) @ 25° C	30A (Ta), 100A (Tc)
Rds On ( Max) @ Id, Vgs	1.45mOhm @ 50A, 10V
Vgs(th) ( Max) @ Id	2.8V @ 120µA
Gate Charge ( Qg) ( Max) @ Vgs	89 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	6500 pF @ 30 V
Drive Voltage ( Max Rds On, Min Rds On)	6V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The BSC014N06NSATMA1 is a N-channel Power MOSFET designed for use in power management applications. It has a maximum drain-source voltage of 60V and a continuous drain current of 110A. This MOSFET has a low on-resistance of 0.014 ohms, which allows for efficient power handling with minimal heat dissipation. Additionally, the BSC014N06NSATMA1 has a fast switching speed, making it suitable for applications that require high frequency operation. It also has a compact TO-263-3 package, which allows for easy mounting on circuit boards. This MOSFET is designed to operate in temperatures ranging from -55°C to 175°C, making it suitable for a wide range of operating conditions. Overall, the BSC014N06NSATMA1 is a reliable and efficient discrete semiconductor component for power management applications