The ZXMN6A07FTA is a N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. It features a low on-resistance of 0.075 ohms, making it efficient for power management and switching tasks. This MOSFET has a maximum drain-source voltage of 60V and a continuous drain current of 10A, making it suitable for medium-power applications. The ZXMN6A07FTA also has a low gate threshold voltage of 2.5V, allowing for easy interfacing with low-voltage control signals. It is housed in a compact and surface-mount friendly package, making it ideal for space-constrained designs. Overall, the ZXMN6A07FTA offers high performance and reliability for various electronic systems that require efficient power management
